This resulted in a very lowered work operate as well as the formation of the Schottky Call among the BrGO and n-sort Si substrate. Resulting from the upper proportion of B-C and B-C3 bonding inside the BrGO/Si gadget than that within the rGO/Si, the reduced Schottky barrier height with the https://www.directivepublications.org/journal-of-applied-nanoscience/